The electrochemical deposition of CuInSe2 (CIS) thin films on fluorine doped tin oxide (FTO) coated glass substrates from non-aqueous electrolyte are presented. The structural and morphological properties were studied. For the codeposition of Cu, In and Se with ideal stoichiometry, the suitable potential range was found to be −1.1 V to −1.3 V versus Ag/AgCl reference electrode using cyclic voltammetry (CV) experiment. X-ray result shows that the CIS films obtained from non-aqueous bath are highly crystalline. The surface morphology of CIS films were studied using scanning probe microscopy. The grain sizes of ∼ 2 to 3 μm and ∼ 0.5 to 1 μm were observed for the CIS layers deposited from non-aqueous and aqueous bath.

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