Topological Insulators $Bi2Te3$ and $Bi2Se3$ Grown by MBE on (001) GaAs Substrates

$Bi2Te3$ $Bi2Se3$ and their alloy films were successfully grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The structural properties of these films were investigated by Reflection high‐energy electron diffraction (RHEED), Atomic force microscopy (AFM), X‐ray diffraction (XRD), High‐resolution transmission electron microscopy (HRTEM) and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform. High‐field and low‐temperature magneto‐transport measurements on these films are carried out and discussed.