High‐Side nLDMOS Design for Ensuring Over‐100 V Breakdown Voltages Available to Purchase

We propose a novel n‐channel LDMOSFET(Lateral Double‐diffused Metal Oxide Semiconductor Field Effect Transistor) structure with a breakdown voltage over 100 V under the thermal budget for the conventional 0.35μm BCD process. We varied the gap between the DEEP N‐WELL and the center of the source for optimization and the doping concentration under the surface by the $NADjusT$‐layer in an effort to obtain high breakdown voltage and simultaneously the low specific on‐resistance. The proposed High‐Side n‐channel LDMOS exhibits BVdss of 110 V and the specific on‐resistance of $2.20 mΩcm2.$