The emission properties of lateral and vertical QD pairs grown on GaAs nanoholes are investigated. Vertical QD pairs with different size asymmetry have been fabricated controlling the bottom QD size independently of the areal density. The emission of individual pairs is dominated by spectral diffusion effects and charge instabilities induced by the local charge environment. Lateral QD pairs have been fabricated on GaAs nanoholes and studied as a function of an electric field applied in the growth plane.
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© 2011 American Institute of Physics.
2011
American Institute of Physics
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