The Kondo effect and coherent transport in stacking‐faults‐free wurtzite InAs nanowires Available to Purchase

The crystalline perfection of wurtzite InAs nanowires grown by the Vapor‐Liquid‐Solid Molecular Beam Epitaxy technique in combination with careful fabrication of nanowire‐based FET devices allowed us to observe a variety of phenomena associated with mesoscopic coherent transport. When the single nanowire channel is nearly pinched‐off the Coulomb blockade conductance oscillations exhibit well‐pronounced Kondo effect approaching the conductance unitary limit. At some gate voltages the breaking of odd‐even parity of the Kondo effect related to the formation of the triplet ground state is observed. At higher gate voltages when the channel is open we observe the Fabry‐Pérot type conductance oscillations. The length of the Fabry‐Pérot electron resonator deduced from the period of the oscillations is in agreement with the physical length of the nanowire device.