Self‐Catalyzed Growth Of GaAs Nanorods On Silicon Via MBE Available to Purchase

Self‐Catalyzed GaAs nanorods (NRs) were grown directly on Silicon (100) and (111) substrates via Molecular Beam Epitaxy. Scanning Electron Microscopy shows that the nanorod lengths ranging from 1 to 12 um with diameter between 30 to 200 nm can be achieved. It is established that nanorod growth is favored between 660 to $680 °C,$ time studies reveal that NRs grow initially via a VLS mechanism and that Ga flux influences the tilt angle of NRs.