Temperature Dependence of Current‐Voltage Characteristics of $Au/Ga0.51In0.49P$ Schottky Barrier Diodes

Current‐Voltage (IV) measurements on $Au/Ga0.51In0.49P$ Schottky barrier diodes in the temperature range 10–320 K were done. The $Ga0.51In0.49P$ layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The Cheung's method is used to estimate the value of a possible series resistance $RS$ and the ideality factor n. It is found that $RS$ is around 42 Ω at 10 K and decreases with temperature to around 7 Ω at 320 K. The IV curves were corrected for $RS.$ The ideality factor also decreases with increasing temperature, from 45.21 at 10 K to 1.99 at 320 K. It is well explained by the $T0$ effect. The saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory, as function of temperature. The zero‐bias barrier height at 320 K was 0.554 eV. It is well explained by the Schottky model. From reverse‐bias IV graphs, it is found that the experimental carrier density (ρ) value increases with temperature.