High Resolution Multiwavelength μ‐Raman Spectroscopy for Nanoelectronic Material Characterization Applications Available to Purchase

As a non‐contact, in‐line monitoring technique for stress/strain and crystallinity of Si, epitaxial $Si1−xGex/Si$ and implanted Si, a polychromator‐based, high resolution, multi‐wavelength Raman spectroscopy system was evaluated. Three major spectral lines at 457.9, 488.0 and 514.5 nm from a multi‐wavelength Ar ion laser were used as the excitation source for virtual depth profiling of material properties. Si stress/strain and Ge content were accurately measured from ultra thin $(>5 nm)$ epitaxial $Si1−xGex/Si.$ Crystalline stress value of C‐implanted Si and stress change before and after annealing were also successfully characterized. High resolution, multi‐wavelength μ‐Raman spectroscopy is shown to be a very promising non‐contact, in‐line characterization technique for nanoelectronic materials.