Boron Doped p‐type Hydrogenated Nanocrystalline Silicon Films Grown by Hot Wire Chemical Vapor Deposition Available to Purchase

In this paper we report on the effect of diborane $(B2H6)$ flow rate on the microstructural and opto‐electrical properties of p‐type nc‐Si:H films grown by HW‐CVD method. An attempt has been made to elucidate the boron doping mechanism of the p‐type nc‐Si:H films. The correlation between $B2H6$ gas flow rate $(FB2H6)$ and material properties including crystalline volume fraction $(XRaman),$ crystallite size $(dRaman),$ band gap $(Eg)$ and hydrogen content $(CH)$ has been established. We obtained p‐type nc‐Si:H films with high dark conductivity $(≤0.2 S/cm),$ high $Eg$ $(>2 eV)$ at low $CH$ $(<3.6 at. %).$ The employment of these films in nc‐Si:H based p‐i‐n solar cell as a p‐type window layer could have better collection of charge carriers when illuminated from p‐side.