The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit‐time delay that may become comparable to or smaller than the scattering‐limited mean free time. For an applied voltage of 0.1 V or lower, the transient response effect degrades the mobility below its long‐length limit. The model includes the carrier injection from the Ohmic contacts which can explain the mobility diminution in the nanoscale MOSFET. As a result, the new model shows excellent agreement with the ballistic mobility experimental data.
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© 2011 American Institute of Physics.
2011
American Institute of Physics
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