In this work, fundamental results on carrier statistics in a carbon nanotube treated as a one‐dimensional material are presented. Also the effect of degeneracy on the capacitance of the carbon nanotube channel in a carbon nan‐otube field effect transistor is discussed. A quantum capacitance as well as a classical capacitance is revealed. Furthermore it is shown that for low gate voltage, the total capacitance is equivalent to the classical capacitance but for high gate voltage it is equivalent to the quantum capacitance. We predict that in the nondegenerate regime, the total capacitance is equivalent to the classical capacitance and that the quantum capacitance can be neglected, whereas only quantum capacitance needs to be taken into account in the calculation of the total capacitance in the degenerate regime.
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20 June 2011
PROCEEDINGS OF THE FOURTH GLOBAL CONFERENCE ON POWER CONTROL AND OPTIMIZATION
2–4 December 2010
Sarawak, (Malaysia)
Research Article|
June 20 2011
CARBON NANOTUBE CAPACITANCE MODEL IN DEGENERATE AND NONDEGENERATE REGIMES
M. T. Ahmadi;
M. T. Ahmadi
aFaculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
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J. F. Webb;
J. F. Webb
bSchool of Engineering and Science, Swinburne University of Technology, Sarawak Campus, 93576, Kuching, Sarawak, Malaysia
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N. A. Amin;
N. A. Amin
aFaculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
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S. M. Mousavi;
S. M. Mousavi
aFaculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
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H. Sadeghi;
H. Sadeghi
aFaculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
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M. R. Neilchiyan;
M. R. Neilchiyan
aFaculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
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R. Ismail
R. Ismail
aFaculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
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M. T. Ahmadi
a
J. F. Webb
b
N. A. Amin
a
S. M. Mousavi
a
H. Sadeghi
a
M. R. Neilchiyan
a
R. Ismail
a
aFaculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
bSchool of Engineering and Science, Swinburne University of Technology, Sarawak Campus, 93576, Kuching, Sarawak, Malaysia
AIP Conf. Proc. 1337, 173–176 (2011)
Citation
M. T. Ahmadi, J. F. Webb, N. A. Amin, S. M. Mousavi, H. Sadeghi, M. R. Neilchiyan, R. Ismail; CARBON NANOTUBE CAPACITANCE MODEL IN DEGENERATE AND NONDEGENERATE REGIMES. AIP Conf. Proc. 20 June 2011; 1337 (1): 173–176. https://doi.org/10.1063/1.3592461
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