Investigations into the effects of high‐energy ion bombardment of ultrananocrystalline diamond (UNCD) thin films was performed using 3 and 6 MeV protons and 24 MeVF4+, with the fluence of 2.1×1017ions/cm2,2.9×1017ions/cm2, and 6.7×1015ions/cm2 respectively. Objective of the research is to investigate the effect of structural damage on the physical properties of the material and compare it with the structure of unirradiated and N doped UNCD. Pre‐ and post‐irradiated samples were analyzed by ion beam analysis (IBA) measurements, Raman spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM). IBA measurements including Rutherford backscattering spectrometry (RBS), non‐Rutherford backscattering spectrometry (NRBS) and elastic recoil detection analysis (ERDA) were used to determine elemental concentration of pre‐ and post‐irradiated samples. Visible Raman spectra corresponding to samples irradiated at 3 and 6 MeV protons did not show much variation. For 24 MeVF4+ irradiated sample, significant changes were observed, particularly the loss of a shoulder at 1179 cm−1 and sharpening of the G peak at around 1532 cm−1, indicating possible significant changes at the grain boundary and increase in sp2 phase. AFM measurements show a reduction in RMS roughness after bombardment possibly due to the graphitization of the UNCD surface. The results of IBA measurements did not show any change in the elemental concentration or interface region between film and substrate.

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