We have investigated the effects of FLA technique on the DRAM peripheral transistor improvements by integrating into the SDRTA (Source/Drain RTA) and ADD RTA (Add RTA after contact formation). FLA with conventional RTA was not effective because of SCE (Short Channel Effect) control. FLA only was effective to improve SCE and Iop, and especially more effective on technology shrink. By flash anneal (FLA), we tried to achieve better activation, lower series resistance and less dopant loss. For higher activation, the pre‐heat temperature of FLA was varied by 50 °C higher or lower than the desired base temperature. For lower resistance, the sidewall spacer thickness was reduced by 50 Å, 100 Å and 150 Å. For reducing dopant loss during the contact etch process, the deeper S/D Rp was used by increasing the S/D implant energy with an increased Rp by 150 Å, 200 Å and 250 Å. Results with FLA base show 13.4% improvement, and at the higher pre‐heat temperature, it can be improved to 16.9%. In conclusion, FLA can be one of the candidates for periperal transistor performance improvement of next generation DRAM device.
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7 January 2011
ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010
6–11 June 2010
Kyoto, (Japan)
Research Article|
January 07 2011
A Study of Flash Anneal in combination with the conventional RTA for DRAM application Available to Purchase
YoungHo Lee;
YoungHo Lee
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
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JinKu Lee;
JinKu Lee
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
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MiRi Lee;
MiRi Lee
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
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SeungJoon Jeon;
SeungJoon Jeon
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
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JaeGeun Oh;
JaeGeun Oh
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
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Yu. Jun Lee;
Yu. Jun Lee
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
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MinJung Shin;
MinJung Shin
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
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JaeYoung Kim;
JaeYoung Kim
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
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SeonYong Cha;
SeonYong Cha
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
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Kwon Hong;
Kwon Hong
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
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SungKi Park;
SungKi Park
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
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Tatsufumi Kusuda;
Tatsufumi Kusuda
bDAINIPPON SCREEN MFG CO.,LTD, 480‐1 Takamiya‐cho, Hikone, Shiga, 522‐0292, Japan
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Hideo Nishihara;
Hideo Nishihara
bDAINIPPON SCREEN MFG CO.,LTD, 480‐1 Takamiya‐cho, Hikone, Shiga, 522‐0292, Japan
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Kenichi Yokouchi
Kenichi Yokouchi
bDAINIPPON SCREEN MFG CO.,LTD, 480‐1 Takamiya‐cho, Hikone, Shiga, 522‐0292, Japan
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YoungHo Lee
a
JinKu Lee
a
MiRi Lee
a
SeungJoon Jeon
a
JaeGeun Oh
a
Yu. Jun Lee
a
MinJung Shin
a
JaeYoung Kim
a
SeonYong Cha
a
Kwon Hong
a
SungKi Park
a
Tatsufumi Kusuda
b
Hideo Nishihara
b
Kenichi Yokouchi
b
aHynix Semiconductor Inc., San 136‐1 Ami‐ri Bubal‐eub Icheon‐si Kyoungki‐do 467‐701, Korea
bDAINIPPON SCREEN MFG CO.,LTD, 480‐1 Takamiya‐cho, Hikone, Shiga, 522‐0292, Japan
AIP Conf. Proc. 1321, 75–78 (2011)
Citation
YoungHo Lee, JinKu Lee, MiRi Lee, SeungJoon Jeon, JaeGeun Oh, Yu. Jun Lee, MinJung Shin, JaeYoung Kim, SeonYong Cha, Kwon Hong, SungKi Park, Tatsufumi Kusuda, Hideo Nishihara, Kenichi Yokouchi; A Study of Flash Anneal in combination with the conventional RTA for DRAM application. AIP Conf. Proc. 7 January 2011; 1321 (1): 75–78. https://doi.org/10.1063/1.3548469
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