An accurate dose distribution control system was developed for a Nissin iG4 ion implanter, which is utilized for low temperature polycrystalline silicon thin film transistors (LTPS‐TFT), to improve dose uniformity under a photoresist outgas environment. The system consisted of a scan speed controller for glass substrates and monitors of ion beam flux to the target and pressure. To examine the performance, silicon wafers fixed on a glass sheet covered with photoresist were implanted. The dose uniformity was evaluated by measuring sheet resistance. Good uniformity was demonstrated with the use of the dose control under pressure variations of one order of magnitude.

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