An aluminum ion beam was extracted from a Bernas‐type ion source equipped with alumina plasma reflectors. The first reflector was located near the filament, and the other was located in the opposite side of the arc chamber. The performance test of the ion source was carried out at the Nissin’s ion source test stand. In case of a discharge by introducing Ar gas, a singly charged aluminum ion beam current was measured at about 20 μA. However, by introducing gas, beam current reached to 1.3 mA under nearly the same ionization conditions as Ar discharge. Also a doubly charged aluminum ion beam current was reached at 130 electric μA with gas discharge. The beam current stability was confirmed within ±6%/hour. The Bernas‐type ion source with alumina reflectors using gas discharge is able to produce enough aluminum ion beam compared to the conventional ion source, which contributes to the SiC device fabrication.
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7 January 2011
ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010
6–11 June 2010
Kyoto, (Japan)
Research Article|
January 07 2011
Aluminum Ion Beam Production for Medium Current Implanter
N. Miyamoto;
N. Miyamoto
Nissin Ion Equipment Co., LTD., (575, Kuzetonoshiro‐Cho, Minami‐ku, Kyoto, 601‐8205, Japan)
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T. Igo;
T. Igo
Nissin Ion Equipment Co., LTD., (575, Kuzetonoshiro‐Cho, Minami‐ku, Kyoto, 601‐8205, Japan)
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T. Ikejiri;
T. Ikejiri
Nissin Ion Equipment Co., LTD., (575, Kuzetonoshiro‐Cho, Minami‐ku, Kyoto, 601‐8205, Japan)
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T. Yamashita
T. Yamashita
Nissin Ion Equipment Co., LTD., (575, Kuzetonoshiro‐Cho, Minami‐ku, Kyoto, 601‐8205, Japan)
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AIP Conf. Proc. 1321, 384–387 (2011)
Citation
N. Miyamoto, T. Igo, T. Ikejiri, T. Yamashita; Aluminum Ion Beam Production for Medium Current Implanter. AIP Conf. Proc. 7 January 2011; 1321 (1): 384–387. https://doi.org/10.1063/1.3548428
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