Non‐Contact and Non‐Destructive Characterization of Shallow Implanted Silicon PN Junctions using Ultra‐Violet Raman Spectroscopy Available to Purchase

Ultra‐shallow boron implanted (⁠$B+$ 1 keV $1×1015 cm−2$⁠) n‐type Si wafers were prepared and characterized by four point probe, SIMS and 363.8 nm excited ultra‐violet (UV) Raman spectroscopy before and after rapid thermal annealing (RTA). The penetration depth of 363.8 nm laser radiation in a backscattering Raman configuration, is approximately 5 nm. As junction depth increases from high temperature RTA, sheet resistance decreases. Raman peaks shift in the lower wavenumber direction and its full‐width‐at‐half‐maximum (FWHM) broadens. There is clear correlation between junction depth and Raman spectra data. UV Raman spectroscopy can be used as a very powerful non‐contact, non‐destructive, in‐line characterization and monitoring technique for ultra‐shallow junctions (USJs).