Boron implanted (B 5 keV ) Si wafers before and after rapid thermal annealing (RTA) were characterized using multi‐wavelength Raman spectroscopy and photoluminescence (PL) measurement techniques. Strong correlation among Raman, PL spectra and RTA conditions are observed. By selecting appropriate excitation wavelengths, approximate dopant profiles, crystallinity, dopant activation, and location and density of non‐radiative recombination centers (originated by defects and damage) of B implanted wafers were successfully characterized by Raman and PL measurements without making contact. Multi‐wavelength Raman and PL can provide advantages as inline process and material monitoring techniques in addition to conventional characterization techniques.
Skip Nav Destination
Article navigation
7 January 2011
ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010
6–11 June 2010
Kyoto, (Japan)
Research Article|
January 07 2011
Multi‐Wavelength Raman and Photoluminescence Characterization of Implanted Silicon Before and After Rapid Thermal Annealing Available to Purchase
Woo Sik Yoo;
Woo Sik Yoo
WaferMasters, Inc., 246 East Gish Road., San Jose, CA 95112, USA
Search for other works by this author on:
Takeshi Ueda;
Takeshi Ueda
WaferMasters, Inc., 246 East Gish Road., San Jose, CA 95112, USA
Search for other works by this author on:
Toshikazu Ishigaki;
Toshikazu Ishigaki
WaferMasters, Inc., 246 East Gish Road., San Jose, CA 95112, USA
Search for other works by this author on:
Kitaek Kang
Kitaek Kang
WaferMasters, Inc., 246 East Gish Road., San Jose, CA 95112, USA
Search for other works by this author on:
Woo Sik Yoo
WaferMasters, Inc., 246 East Gish Road., San Jose, CA 95112, USA
Takeshi Ueda
WaferMasters, Inc., 246 East Gish Road., San Jose, CA 95112, USA
Toshikazu Ishigaki
WaferMasters, Inc., 246 East Gish Road., San Jose, CA 95112, USA
Kitaek Kang
WaferMasters, Inc., 246 East Gish Road., San Jose, CA 95112, USA
AIP Conf. Proc. 1321, 204–207 (2011)
Citation
Woo Sik Yoo, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang; Multi‐Wavelength Raman and Photoluminescence Characterization of Implanted Silicon Before and After Rapid Thermal Annealing. AIP Conf. Proc. 7 January 2011; 1321 (1): 204–207. https://doi.org/10.1063/1.3548350
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
The implementation of reflective assessment using Gibbs’ reflective cycle in assessing students’ writing skill
Lala Nurlatifah, Pupung Purnawarman, et al.
Effect of coupling agent type on the self-cleaning and anti-reflective behaviour of advance nanocoating for PV panels application
Taha Tareq Mohammed, Hadia Kadhim Judran, et al.
Design of a 100 MW solar power plant on wetland in Bangladesh
Apu Kowsar, Sumon Chandra Debnath, et al.
Related Content
Multi-wavelength Raman and photoluminescence characterization of implanted n+/p junctions under various rapid thermal annealing conditions
AIP Conf. Proc. (November 2012)
Non‐Contact and Non‐Destructive Characterization of Shallow Implanted Silicon PN Junctions using Ultra‐Violet Raman Spectroscopy
AIP Conf. Proc. (January 2011)
High Resolution Multiwavelength μ‐Raman Spectroscopy for Nanoelectronic Material Characterization Applications
AIP Conf. Proc. (November 2011)
Direct observation of x-ray radiation-induced damage to SiO2/Si interface using multiwavelength room temperature photoluminescence
J. Vac. Sci. Technol. B (May 2016)
Defect detection in recrystallized ultra-shallow implanted silicon by multiwavelength-excited photoluminescence
AIP Conf. Proc. (November 2012)