Thin films of were grown by rf magnetron sputtering technique and studied the influence of In situ annealing treatment on microstructural and electrochemical properties of the films. Annealing treatment in presence of ambient develops characteristic (104) plan in relative to (003) plane texture indicating that the films have HT‐layered structure with R3¯m symmetry. The effect is discussed in terms of grain size, cycling stability, reversibility and the specific discharge capacity.
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© 2010 American Institute of Physics.
2010
American Institute of Physics
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