Raman microscopy has been used to study the carrier concentration and mobility in n‐doped 3C‐SiC epilayers grown on different silicon substrates, namely (100) Si and (111) Si on axis and off‐axis towards the [110] direction. By analyzing the longitudinal optical phonon‐plasmon coupled mode (LOPC), we were able to estimate the 3C‐SiC electron bulk mobility (μ) within the range between 5 and The carrier concentration (n) was ranging from to The observed trend shows a reduction in the electron mobility as the carrier concentration increases for films grown on any substrate considered, accordingly to the existent theory. For equal values of doping concentration, 3C‐SiC epitaxial films grown on (100) Si substrates show a higher mobility than films grown on (111) Si counterparts. This could be ascribed to a higher defect density in (111) Si samples. A deeper characterization by performing Raman maps shows a broadening and a splitting of the 3C‐SiC transverse optical (TO) peaks for the (111) Si samples, confirming a lower crystal quality than the (100) Si.
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1 November 2010
2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E‐MRS Symposium* F*
8–10 October 2010
Strasbourg, (France)
Research Article|
November 01 2010
Optical characterization of bulk mobility in 3C‐SiC films grown on different orientation of Si substrates
N. Piluso;
N. Piluso
aIstituto per la Microelettronica e Microsistemi IMM‐CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
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A. Severino;
A. Severino
aIstituto per la Microelettronica e Microsistemi IMM‐CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
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M. Camarda;
M. Camarda
aIstituto per la Microelettronica e Microsistemi IMM‐CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
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A. Canino;
A. Canino
aIstituto per la Microelettronica e Microsistemi IMM‐CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
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A. La Magna;
A. La Magna
aIstituto per la Microelettronica e Microsistemi IMM‐CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
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F. La Via
F. La Via
aIstituto per la Microelettronica e Microsistemi IMM‐CNR, sezione di Catania, Stradale Primosole 50, 95121, Catania, Italy
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AIP Conf. Proc. 1292, 99–102 (2010)
Citation
N. Piluso, A. Severino, M. Camarda, A. Canino, A. La Magna, F. La Via; Optical characterization of bulk mobility in 3C‐SiC films grown on different orientation of Si substrates. AIP Conf. Proc. 1 November 2010; 1292 (1): 99–102. https://doi.org/10.1063/1.3518322
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