The present work demonstrates the applicability of FTIR‐ellipsometry to determine vibrational properties and stress distributions in thin and ultra thin 3C‐SiC heteroepitaxial layers grown on Si(111) and Si(100) substrates. Additionally, they are compared to the properties of hexagonal SiC layers formed on Si(111) are analyzed.
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© 2010 American Institute of Physics.
2010
American Institute of Physics
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