This work focuses on the microstructure of SiC layers grown by liquid phase epitaxy at different temperatures using pure Si or Si with an additive as solvents. 3C‐SiC wafers with (001) orientation from HAST Corp. were used as seeds in all cases. The growth temperature was varied in the range of 1650° C to 1800° C and three different solvents were compared i.e. pure Si, Si+Al and Si+InP. The structural study revealed that when AlSi melts were used, several short and long period polytypes, as well as Al inclusions were observed inside the layers. The growth at different temperatures did not affect the overall structural quality but only the type of the observed polytypes. When pure Si and Si+InP melts were used, no polytype transformations were observed. The increase of the temperature slightly improved the density of the defects. In terms of stacking fault density the lowest one (<8×103cm−1) was achieved for the liquid phase epitaxy in the Si+InP melt.

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