Electrical properties of MOS structures based on 3C‐SiC(111) epilayers grown by Vapor‐Liquid‐Solid Transport and Chemical‐Vapor Deposition on 6H‐SiC(0001)

The electrical properties of post‐oxidized PECVD oxides in wet oxygen based on 3C‐SiC(111) epilayers grown by Vapor‐Liquid‐Solid and Chemical‐Vapor‐Deposition mechanisms on 6H‐SiC(0001) have been studied. Different 6H‐SiC(0001) samples exhibiting diverse crystal orientations (on‐axis, 2° off‐axis) and growth conditions were regarded. A comparative study of oxide qualities has been carried out via capacitance and conductance measurements (C‐G‐V). Achieved interface traps densities and effective oxide charges were compared for the different samples. Reliability issues have been considered via current measurements (I–V and TZDB) and statistical data treatment techniques (Weibull plots). Oxides based on 3C‐SiC layer grown by a process combining VLS and CVD methods demonstrated low interface states densities $Dit$ of $1.2×1010 eV−1cm−2$ at 0.63 eV below the conduction band and fixed oxide charges $Qeff/q$ estimated to $−0.1×1011 cm−2.$