3C‐SiC, the only polytype which can be heteroepitaxially grown on large diameter silicon substrates, is a promising material to achieve power Schottky diodes. To carry out such diodes, high quality ohmic contacts are required. In this work, ohmic contacts were investigated on in situ highly n‐doped 3C‐SiC epilayers grown on (100) cheap silicon substrates. Different metals such as nickel, titanium, aluminum and gold were used to carry out the contacts. Classical circular Transfert Length Method (c‐TLM) structures were prepared to evaluate the specific contact resistance. Ni and Ti‐Ni contacts were annealed between 950° C and 1050° C while Al and Ti‐Au contacts were annealed between 300° C and 600° C. The specific contact resistance was then determined by using c‐TLM patterns. For each investigated contact, the best specific contact resistance values obtained are lower than even consecutively to a low temperature annealing.
Skip Nav Destination
Article navigation
1 November 2010
2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E‐MRS Symposium* F*
8–10 October 2010
Strasbourg, (France)
Research Article|
November 01 2010
High Quality Ohmic Contacts on n‐type 3C‐SiC Obtained by High and Low Process Temperature
A. E. Bazin;
A. E. Bazin
aUniversité François Rabelais, Tours, Laboratoire de Microélectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
bSTMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
Search for other works by this author on:
J. F. Michaud;
J. F. Michaud
aUniversité François Rabelais, Tours, Laboratoire de Microélectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
Search for other works by this author on:
F. Cayrel;
F. Cayrel
aUniversité François Rabelais, Tours, Laboratoire de Microélectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
Search for other works by this author on:
M. Portail;
M. Portail
cCentre de Recherche sur l’Hétéro‐Epitaxie et ses Applications CNRS‐UPR10, Rue Bernard Grégory, 06560 Valbonne, France
Search for other works by this author on:
T. Chassagne;
T. Chassagne
dNOVASiC, Savoie Technolac, Arche Bât. 4, BP 267, 73375 Le Bourget du Lac Cedex, France
Search for other works by this author on:
M. Zielinski;
M. Zielinski
dNOVASiC, Savoie Technolac, Arche Bât. 4, BP 267, 73375 Le Bourget du Lac Cedex, France
Search for other works by this author on:
E. Collard;
E. Collard
bSTMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
Search for other works by this author on:
D. Alquier
D. Alquier
aUniversité François Rabelais, Tours, Laboratoire de Microélectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
Search for other works by this author on:
AIP Conf. Proc. 1292, 51–54 (2010)
Citation
A. E. Bazin, J. F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, D. Alquier; High Quality Ohmic Contacts on n‐type 3C‐SiC Obtained by High and Low Process Temperature. AIP Conf. Proc. 1 November 2010; 1292 (1): 51–54. https://doi.org/10.1063/1.3518309
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00