Evaluation of the Crystalline Quality of Strongly Curved 3C‐SiC/Si Epiwafers Through X‐Ray Diffraction Analyses Available to Purchase

The value of the full width at half maximum of the rocking curve of symmetric 3C SiC reflection, often considered as the “quality indicator” of the epitaxial film, is in fact a convolution of several contributions, among which the curvature related part may play a dominant role. Thus, a precise determination of the curvature related broadening is necessary to extract the information on the film quality from the rocking curve. In this paper we demonstrate experimentally the coexistence of two independent curvature related broadening effects. We also propose an analytical model that describes quantitatively both effects.