Growing p‐type 3C‐SiC heteroepitaxial layers by Vapour‐Liquid‐Solid mechanism on 6H‐SiC substrate

The present work reports on the tentative growth of p‐type 3C‐SiC layers deposited by vapour‐liquid‐solid (VLS) mechanism using Si‐Ga and Si‐Ge‐Al melts with different compositions and temperatures. It was found that 3C‐SiC polytype was always recorded when both liquid phases were used. However, from Raman characterizations, only the layers grown from Al‐based melts show evidence of p‐type doping, with pronounced Fano interferences. For the layers grown using Ga‐based melts, the layers are n type due to higher (non intentional) incorporation of nitrogen compared to gallium one. A simple mechanism is proposed to explain these differences.