The downscaling of metal‐oxide‐semiconductor field‐effect transistor (MOSFET) has been taking place since decades ago for enhancing circuit functionality and also for extending Moore’s Law. As the downsizing of MOSFET continues, it faces the challenge of size limitation and severe short‐channel effects (SCEs) appear to affect the performance of nanoscale‐MOSFET. Some novel nanoelectronic devices are proposed, hoping to overcome those MOSFET limitations. One of the novel nanoelectronic devices is carbon nanotube field‐effect transistor (CNFET). Simulation work using MATLAB based programming on CNFET is carried out to investigate the dependence of current‐voltage (I‐V) characteristics on various carbon nanotube (CNT) diameters, insulator thicknesses and temperatures as well as their transconductances, gate delays and energy delay products (EDPs). The simulation results are presented and then compared with conventional nanoscale‐MOSFET. It seems to provide better performance than MOSFET in term of high speed capability and lower switching power consumption.
Skip Nav Destination
Article navigation
11 March 2010
INTERNATIONAL CONFERENCE ON ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY: (ICAMN—2007)
29 May–1 June 2009
Langkawi, Kedah (Malaysia)
Research Article|
March 11 2010
Characterization of MOSFET‐like Carbon Nanotube Field Effect Transistor Available to Purchase
A. M. Hashim;
A. M. Hashim
Material Innovations and Nanoelectronics (MINE) Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81300 Skudai, Johor, Malaysia
Search for other works by this author on:
H. H. Ping;
H. H. Ping
Material Innovations and Nanoelectronics (MINE) Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81300 Skudai, Johor, Malaysia
Search for other works by this author on:
C. Y. Pin
C. Y. Pin
Material Innovations and Nanoelectronics (MINE) Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81300 Skudai, Johor, Malaysia
Search for other works by this author on:
A. M. Hashim
Material Innovations and Nanoelectronics (MINE) Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81300 Skudai, Johor, Malaysia
H. H. Ping
Material Innovations and Nanoelectronics (MINE) Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81300 Skudai, Johor, Malaysia
C. Y. Pin
Material Innovations and Nanoelectronics (MINE) Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81300 Skudai, Johor, Malaysia
AIP Conf. Proc. 1217, 11–18 (2010)
Citation
A. M. Hashim, H. H. Ping, C. Y. Pin; Characterization of MOSFET‐like Carbon Nanotube Field Effect Transistor. AIP Conf. Proc. 11 March 2010; 1217 (1): 11–18. https://doi.org/10.1063/1.3377796
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
The implementation of reflective assessment using Gibbs’ reflective cycle in assessing students’ writing skill
Lala Nurlatifah, Pupung Purnawarman, et al.
Effect of coupling agent type on the self-cleaning and anti-reflective behaviour of advance nanocoating for PV panels application
Taha Tareq Mohammed, Hadia Kadhim Judran, et al.
Design of a 100 MW solar power plant on wetland in Bangladesh
Apu Kowsar, Sumon Chandra Debnath, et al.
Related Content
Performance evaluation of the two-stage CNFET operational amplifier at 32 nm and 10 nm technology nodes
AIP Conf. Proc. (June 2023)
A study on CNFET quaternary logic
AIP Conf. Proc. (July 2024)
Gate Control Coefficient Effect on CNFET Characteristic
AIP Conf. Proc. (June 2009)
Drain Control Coefficient Effect on CNFET Performance
AIP Conf. Proc. (June 2009)
Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
Appl. Phys. Lett. (May 2002)