We describe the development of large format array of superconducting tunnel junction detectors that is readout by SONY GaAs‐JFET cryogenic integrated circuits. High quality SIS photon detectors have high dynamic impedance that can be readout by low gate leakage GaAs‐JFET circuits. Our imaging array design, with niobium SIS photon detectors and GaAs‐JFET cryogenics electronics, uses integrating amplifiers, multiplexers and shift‐registers to readout large number of pixels that is similar to CMOS digital cameras. We have designed and fabricated GaAs‐JFET cryogenic integrated circuits, such as AC‐coupled capacitive trans‐impedance amplifier, multiplexers with sample‐and‐holds and shift‐registers, for 32‐channel readout module. The Advanced Technology Center of National Astronomical Observatory of Japan have started extensive development program for large format array of SIS photon detectors.
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16 December 2009
THE THIRTEENTH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS—LTD13
20–24 July 2009
Stanford (California)
Research Article|
December 16 2009
Superconducting THz Camera with GaAs‐JFET Cryogenic Readout Electronics
Hiroshi Matsuo;
Hiroshi Matsuo
aNational Astronomical Observatory of Japan, 2‐21‐1 Osawa, Mitaka, Tokyo 181‐8588, Japan
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Yasunori Hibi;
Yasunori Hibi
aNational Astronomical Observatory of Japan, 2‐21‐1 Osawa, Mitaka, Tokyo 181‐8588, Japan
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Toyoaki Suzuki;
Toyoaki Suzuki
aNational Astronomical Observatory of Japan, 2‐21‐1 Osawa, Mitaka, Tokyo 181‐8588, Japan
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Masato Naruse;
Masato Naruse
aNational Astronomical Observatory of Japan, 2‐21‐1 Osawa, Mitaka, Tokyo 181‐8588, Japan
bDepartment of Astronomy, The University of Tokyo, Bunkyo‐ku, Tokyo 113‐0033, Japan
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Takashi Noguchi;
Takashi Noguchi
aNational Astronomical Observatory of Japan, 2‐21‐1 Osawa, Mitaka, Tokyo 181‐8588, Japan
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Yutaro Sekimoto;
Yutaro Sekimoto
aNational Astronomical Observatory of Japan, 2‐21‐1 Osawa, Mitaka, Tokyo 181‐8588, Japan
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Yoshinori Uzawa;
Yoshinori Uzawa
aNational Astronomical Observatory of Japan, 2‐21‐1 Osawa, Mitaka, Tokyo 181‐8588, Japan
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Hirohisa Nagata;
Hirohisa Nagata
cInstitute of Space and Astronautical Science, JAXA, 3‐1‐1 Yoshinodai, Sagamihara, Kanagawa 229‐8510, Japan
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Hirokazu Ikeda;
Hirokazu Ikeda
cInstitute of Space and Astronautical Science, JAXA, 3‐1‐1 Yoshinodai, Sagamihara, Kanagawa 229‐8510, Japan
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Seiichiro Ariyoshi;
Seiichiro Ariyoshi
dTerahertz Sensing and Imaging Laboratory, RIKEN, Sendai, Miyagi 980‐0845, Japan
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Chiko Otani;
Chiko Otani
dTerahertz Sensing and Imaging Laboratory, RIKEN, Sendai, Miyagi 980‐0845, Japan
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Tom Nitta;
Tom Nitta
eInstitute of Physics, University of Tsukuba, Ten‐nodai, 1‐1‐1 Tsukuba, Ibaraki 305‐8577, Japan
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Yao;
Yao
fPurple Mountain Observatory, Chinese Academy of Science, Nanjing 210008, China
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Mikio Fujiwara
Mikio Fujiwara
gNational Institute of Information and Communications Technology, 4‐2‐1 Nukuikita, Koganei, Tokyo 184‐8795, Japan
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AIP Conf. Proc. 1185, 393–396 (2009)
Citation
Hiroshi Matsuo, Yasunori Hibi, Toyoaki Suzuki, Masato Naruse, Takashi Noguchi, Yutaro Sekimoto, Yoshinori Uzawa, Hirohisa Nagata, Hirokazu Ikeda, Seiichiro Ariyoshi, Chiko Otani, Tom Nitta, Qi‐jun, Yao, Mikio Fujiwara; Superconducting THz Camera with GaAs‐JFET Cryogenic Readout Electronics. AIP Conf. Proc. 16 December 2009; 1185 (1): 393–396. https://doi.org/10.1063/1.3292360
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