The development of carbon nanotube field‐effect transistor (CNFET) as alternative to existing transistor technology has long been published and discussed. The emergence of this device offers new material and structure in building a transistor. This paper intends to do an analysis of gate control coefficient effect on CNFET performance. The analysis is based on simulation study of current‐voltage (I‐V) characteristic of ballistic CNFET. The simulation study used the MOSFET‐like CNFET mathematical model to establish the device output characteristic. Based on the analysis of simulation result, it is found that the gate control coefficient contributes to a significant effect on the performance of CNFET. The result also shown the parameter could help to improve the device performance in terms of its output and response as well. Nevertheless, the characteristic of the carbon nanotube that acts as the channel is totally important in determining the performance of the transistor as a whole.
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1 June 2009
NANOSCIENCE AND NANOTECHNOLOGY: International Conference on Nanoscience and Nanotechnology—2008
18–21 November 2008
Shah Alam, Selandor (Malaysia)
Research Article|
June 01 2009
Gate Control Coefficient Effect on CNFET Characteristic Available to Purchase
Rahmat Sanudin;
Rahmat Sanudin
Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Johor, Malaysia
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Ahmad Alabqari Ma’Radzi;
Ahmad Alabqari Ma’Radzi
Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Johor, Malaysia
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Nafarizal Nayan
Nafarizal Nayan
Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Johor, Malaysia
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Rahmat Sanudin
Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Johor, Malaysia
Ahmad Alabqari Ma’Radzi
Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Johor, Malaysia
Nafarizal Nayan
Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Johor, Malaysia
AIP Conf. Proc. 1136, 282–286 (2009)
Citation
Rahmat Sanudin, Ahmad Alabqari Ma’Radzi, Nafarizal Nayan; Gate Control Coefficient Effect on CNFET Characteristic. AIP Conf. Proc. 1 June 2009; 1136 (1): 282–286. https://doi.org/10.1063/1.3160148
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