Drain Control Coefficient Effect on CNFET Performance Available to Purchase

The performance of carbon nanotube field‐effect transistor (CNFET) has been long predicted to surpass the existing field‐effect transistor. The performance is mostly contributed by the characteristic of the nanotube itself along with the design parameter of the whole transistor. This paper proposes a simulation study of drain control coefficient effect on CNFET performance as a whole device. The study comes from the analysis on simulation study of current‐voltage (I‐V) characteristic of ballistic CNFET. The simulation study used the MOSFET‐like CNFET mathematical model to establish the device output characteristic. From the simulation result obtained, it is found that the gate control coefficient contributes to a significant effect on the performance of CNFET particularly the level of leakage current and threshold voltage. The result shown the drain control parameter could help to improve the device performance but there is trade between leakage power and device response. Both parameters should be tuned in such a way that the leakage power could be suppressed and the device response is improved. It is concluded that the drain control coefficient should be picked so that the best performance can be achieved.