Possible Correlation between Flicker Noise and Bias Temperature Stress

A link between Bias Temperature Stress (BTS, NBTI) and flicker noise $(1/f‐noise)$ is explored by comparing flicker noise data to charge pumping data. Large‐area devices are shown to initially have very low, bias independent normalized flicker noise. After BTS the normalized noise increases considerably and becomes gate bias dependent. Small‐area devices are shown to exhibit bias dependent burst noise (RTS) in addition to flicker noise, regardless of BTS.