Low‐Frequency Noise in a $0.18 μm$ Mixed‐Mode CMOS Technology at Low Temperature

We report on the characterization of Low‐Frequency (LF) noise in a commercial dual gate process with 1.8 V $(Tox = 3.3 nm)$ and 3.3 V $(Tox = 6.5 nm)$ MOSFETs at 77 K. The LF noise behavior in various MOSFETs of this process is well described physically by the correlated carrier number—mobility fluctuation model. A simplified compact model, suitable for analog circuit simulation and valid from weak to strong inversion regimes, is presented.