We report on the characterization of Low‐Frequency (LF) noise in a commercial dual gate process with 1.8 V and 3.3 V MOSFETs at 77 K. The LF noise behavior in various MOSFETs of this process is well described physically by the correlated carrier number—mobility fluctuation model. A simplified compact model, suitable for analog circuit simulation and valid from weak to strong inversion regimes, is presented.
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Research Article| April 23 2009
Low‐Frequency Noise in a Mixed‐Mode CMOS Technology at Low Temperature
AIP Conf. Proc. 1129, 317–320 (2009)
P. Martin, M. Cavelier, G. Ghibaudo; Low‐Frequency Noise in a Mixed‐Mode CMOS Technology at Low Temperature. AIP Conf. Proc. 23 April 2009; 1129 (1): 317–320. https://doi.org/10.1063/1.3140462
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