We report on the characterization of Low‐Frequency (LF) noise in a commercial dual gate process with 1.8 V (Tox = 3.3 nm) and 3.3 V (Tox = 6.5 nm) MOSFETs at 77 K. The LF noise behavior in various MOSFETs of this process is well described physically by the correlated carrier number—mobility fluctuation model. A simplified compact model, suitable for analog circuit simulation and valid from weak to strong inversion regimes, is presented.

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