Pulsed‐slow‐positron‐beam‐based positron lifetime spectroscopy was used to investigate the nature of vacancy defects induced by 20 MeV Au implantation in single crystals 6H‐SiC. Preliminary analysis of the data shows that at lower fluence, below a positron lifetime of 220 ps has been obtained: it could be associated with the divacancy in comparison with the literature. At higher fluence, above a positron lifetime of 260–270 ps, increasing with the incident positron energy, has been observed after decomposition of the lifetime spectra. By comparison with lifetime calculations, open‐volumes such as quadrivacancy clusters could be associated with this value.
Nature of Defects Induced by Au Implantation in Hexagonal Silicon Carbide Single Crystals
Aurélie Gentils, Marie‐France Barthe, Werner Egger, Peter Sperr; Nature of Defects Induced by Au Implantation in Hexagonal Silicon Carbide Single Crystals. AIP Conf. Proc. 10 March 2009; 1099 (1): 891–895. https://doi.org/10.1063/1.3120183
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