Pulsed‐slow‐positron‐beam‐based positron lifetime spectroscopy was used to investigate the nature of vacancy defects induced by 20 MeV Au implantation in single crystals 6H‐SiC. Preliminary analysis of the data shows that at lower fluence, below 1014cm−2, a positron lifetime of 220 ps has been obtained: it could be associated with the divacancy VSiVC in comparison with the literature. At higher fluence, above 1015cm−2, a positron lifetime of 260–270 ps, increasing with the incident positron energy, has been observed after decomposition of the lifetime spectra. By comparison with lifetime calculations, open‐volumes such as quadrivacancy (VSiVC)2 clusters could be associated with this value.

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