Ion Beam Layer Separation of Cadmium Zinc Telluride

We have investigated the approach of ion induced layer separation process for layer splitting from Cadmium Zinc Telluride (CZT) bulk single crystal and transferring and bonding the separated layers with Silicon (Si) wafers. Layer separation experiments have been carried out at UES using 1 MeV $H+$ ions from the high energy accelerator (1.7 MV Tandetron). Ion dose and annealing temperature for complete separation of $1 cm×1 cm$ size layers have been optimized. Bonding of CZT with Si was accomplished using various IR transmitting chalcogenide glasses. Cracking of separated CZT films was occurring for chalcogenide glass bonded films. Optimization of thermal treatment has led to the minimization of such cracks. Detailed characterizations of the separated films will be presented.