The Role of Implanter Parameters on Implant Damage Generation: an Atomistic Simulation Study

In this article we use atomistic process simulation to study the effect of some implanter parameters on damage accumulation for two types of implanters: a batch tool with a spot ion beam and a single‐wafer tool with a ribbon beam. The studied parameters are the scanning speed, the wheel rotation speed and the beam diameter for the former, and the scanning speed and the beam width for the latter. We kept constant not only the species, dose and energy, but also the average dose rate, managed by the beam current, the wafer temperature (T). In such conditions damage accumulation is expected to be constant. However we show that beam focalization has a strong impact, because it affects the instantaneous dose rate. We define the instantaneous dose rate as the dose rate seen by a point of the wafer while it passes through the beam. Its effects on damage accumulation are comparable to those of wafer T and average dose rate.