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Journal Articles

Self-aligned laser opening and stencil metallization for silver-free contacts in silicon solar cells

Open Access
Yuelin Xiong, Ruidong Zhou, Anastasia Soeriyadi, Zongtao Liu, Soumyajit Maitra, Yifu Shi, Jingyan Chen, John O’Sullivan, Matthew Wright, Pietro Altermatt, Ruy Sebastian Bonilla
Journal: APL Electronic Devices
APL Electronic Devices 1, 026109 (2025)
https://doi.org/10.1063/5.0250845
Published: April 2025
View articletitled, Self-aligned laser opening and stencil metallization for silver-free contacts in silicon solar cells
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Journal Articles

Consistent reporting of performances in Ga2O3 UV-C photodetectors

Open Access
David Nicol, Farnaz Hadizadeh, Sean Douglas, Steve Reynolds, Fabien C. P. Massabuau
Journal: APL Electronic Devices
APL Electronic Devices 1, 026108 (2025)
https://doi.org/10.1063/5.0255413
Published: April 2025
View articletitled, Consistent reporting of performances in Ga2O3 UV-C photodetectors
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Journal Articles

Aerosol Jet® printing of HF RFID antennas on fiber-based paper substrates for smart packaging

Open Access
Akash Verma, Miriam Seiti, Jarne Machiels, Raf Appeltans, Marie Geiβler, Lydia Tempel, Wim Deferme, Mieke Buntinx, Eleonora Ferraris
Journal: APL Electronic Devices
APL Electronic Devices 1, 026104 (2025)
https://doi.org/10.1063/5.0253441
Published: April 2025
View articletitled, Aerosol Jet® printing of HF RFID antennas on fiber-based paper substrates for smart packaging
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Journal Articles

High temperature operation and failure of Ga2O3 Schottky barrier diodes: An in situ TEM study

Editor’s PickOpen Access
Nahid Sultan Al-Mamun, Jian-Sian Li, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen Pearton
Journal: APL Electronic Devices
APL Electronic Devices 1, 016103 (2025)
https://doi.org/10.1063/5.0250729
Published: March 2025
View articletitled, High temperature operation and failure of Ga2O3 Schottky barrier diodes: An in situ TEM study
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Journal Articles

Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability

Open Access
Joseph A. Spencer, Yuan Qin, Alan G. Jacobs, Boyan Wang, Neeraj Nepal, Hannah N. Masten, Matthew Porter, Bixuan Wang, Geoffrey M. Foster, Akito Kuramata, Karl D. Hobart, Travis J. Anderson, Yuhao Zhang, Marko J. Tadjer
Journal: APL Electronic Devices
APL Electronic Devices 1, 016108 (2025)
https://doi.org/10.1063/5.0238709
Published: March 2025
View articletitled, Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability
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Journal Articles

Ultra-high permittivity BaTiO3 (ε = 230) on Al2O3/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications

FeaturedOpen Access
Kyle J. Liddy, Weisong Wang, Stefan Nikodemski, Chris Chae, Kevin D. Leedy, Jean-Pierre Bega, Nolan S. Hendricks, Elizabeth A. Sowers, Ahmad E. Islam, Jinwoo Hwang, Siddharth Rajan, Andrew J. Green
Journal: APL Electronic Devices
APL Electronic Devices 1, 016112 (2025)
https://doi.org/10.1063/5.0250731
Published: March 2025
View articletitled, Ultra-high permittivity BaTiO3 (ε = 230) on Al2O3/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications
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Journal Articles

Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes

Open Access
Vijay Gopal Thirupakuzi Vangipuram, Kaitian Zhang, Dong Su Yu, Lingyu Meng, Christopher Chae, Yibo Xu, Jinwoo Hwang, Wu Lu, Hongping Zhao
Journal: APL Electronic Devices
APL Electronic Devices 1, 016115 (2025)
https://doi.org/10.1063/5.0255443
Published: March 2025
View articletitled, Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes
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Journal Articles

Incomplete donor ionization based 2D-charge density and drain current model for δ-doped β-(AlxGa1−x)2O3/Ga2O3 HFET

Open Access
Akash Patnaik, Pankaj Sharma
Journal: APL Electronic Devices
APL Electronic Devices 1, 016102 (2025)
https://doi.org/10.1063/5.0243779
Published: March 2025
View articletitled, Incomplete donor ionization based 2D-charge density and drain current model for δ-doped β-(AlxGa1−x)2O3/Ga2O3 HFET
Open the PDF for Incomplete donor ionization based 2D-charge density and drain current model for δ-doped β-(AlxGa1−x)2O3/Ga2O3 HFET in another window