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Journal Articles

Dependence of the incorporated boron concentration near SiO2/4H–SiC interface on trap passivation reduction

Open Access
Runze Wang, Munetaka Noguchi, Hiroshi Watanabe, Koji Kita
Journal: AIP Advances
AIP Advances 14, 075304 (2024)
https://doi.org/10.1063/5.0200844
Published: July 2024
View articletitled, Dependence of the incorporated boron concentration near SiO2/4H–SiC interface on trap passivation reduction
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Journal Articles

Synthesis of AlOxNy thin films using a two-step PE-ALD process

Open Access
Mohammed Zeghouane, Pedro Fernandes Paes Pinto Rocha, Sarah Boubenia, Franck Bassani, Gauthier Lefevre, Sebastien Labau, Laura Vauche, Eugénie Martinez, Marc Veillerot, Bassem Salem
Journal: AIP Advances
AIP Advances 13, 085128 (2023)
https://doi.org/10.1063/5.0154468
Published: August 2023
View articletitled, Synthesis of AlOxNy thin films using a two-step PE-ALD process
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Journal Articles

Design of a beam line for simultaneous dual-beam ion implantation

Open Access
Shixian Cai, Kedong Wang, Wei Huang, Kai Wang, Matthew J. Easton, Jie Li, Caijie Zhang, Tingru Zhu, Hao Wang, Huilin Ge, Xicheng Xie, Haoyang Lan, Yingjie Li, Guohui Wei, Kun Zhu, Xueqing Yan
Journal: AIP Advances
AIP Advances 13, 075107 (2023)
https://doi.org/10.1063/5.0144431
Published: July 2023
View articletitled, Design of a beam line for simultaneous dual-beam ion implantation
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Journal Articles

Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants

Open Access
May Angelu Madarang, Rafael Jumar Chu, Yeonhwa Kim, Quang Nhat Dang Lung, Eunkyo Ju, Won Jun Choi, Daehwan Jung
Journal: AIP Advances
AIP Advances 13, 045124 (2023)
https://doi.org/10.1063/5.0142751
Published: April 2023
View articletitled, Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants
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Journal Articles

Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates

Editor’s PickOpen Access
Jashan Singhal, Jimy Encomendero, Yongjin Cho, Len van Deurzen, Zexuan Zhang, Kazuki Nomoto, Masato Toita, Huili Grace Xing, Debdeep Jena
Journal: AIP Advances
AIP Advances 12, 095314 (2022)
https://doi.org/10.1063/5.0100225
Published: September 2022
View articletitled, Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates
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Journal Articles

Demonstration of MOCVD-grown BGaN with over 10% boron composition

Open Access
Feras AlQatari, Che-Hao Liao, Xiaohang Li
Journal: AIP Advances
AIP Advances 12, 085318 (2022)
https://doi.org/10.1063/5.0113666
Published: August 2022
View articletitled, Demonstration of MOCVD-grown BGaN with over 10% boron composition
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Includes: Supplementary data
Journal Articles

Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium

FeaturedOpen Access
Masataka Imura, Hideki Inaba, Takaaki Mano, Nobuyuki Ishida, Fumihiko Uesugi, Yoko Kuroda, Yoshiko Nakayama, Masaki Takeguchi, Yasuo Koide
Journal: AIP Advances
AIP Advances 12, 015203 (2022)
https://doi.org/10.1063/5.0076706
Published: January 2022
View articletitled, Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium
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Journal Articles

Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times

Open Access
Taehyeon Kim, Changyong Oh, So Hee Park, Joo Won Lee, Sang Ik Lee, Bo Sung Kim
Journal: AIP Advances
AIP Advances 11, 115126 (2021)
https://doi.org/10.1063/5.0069188
Published: November 2021
View articletitled, Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times
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Includes: Supplementary data
Journal Articles

Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures

Editor’s PickOpen Access
Cameron J. Kopas, Justin Gonzales, Shengke Zhang, D. R. Queen, Brian Wagner, McDonald Robinson, James Huffman, Nathan Newman
Journal: AIP Advances
AIP Advances 11, 095007 (2021)
https://doi.org/10.1063/5.0041525
Published: September 2021
View articletitled, Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
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Journal Articles

The influence of temperature and TMGa flow rate on the quality of p-GaN

Open Access
Zikun Cao, Xiaowei Wang, Degang Zhao, Feng Liang, Zongshun Liu
Journal: AIP Advances
AIP Advances 11, 035109 (2021)
https://doi.org/10.1063/5.0045393
Published: March 2021
View articletitled, The influence of temperature and TMGa flow rate on the quality of p-GaN
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Journal Articles

High-temperature annealing of AlN films grown on 4H–SiC

Open Access
F. Brunner, L. Cancellara, S. Hagedorn, M. Albrecht, M. Weyers
Journal: AIP Advances
AIP Advances 10, 125303 (2020)
https://doi.org/10.1063/5.0027330
Published: December 2020
View articletitled, High-temperature annealing of AlN films grown on 4H–SiC
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Journal Articles

Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance–voltage characteristics of the metal–insulator–semiconductor structures

Open Access
Xi Wang, Kai He, Xing Chen, Yang Li, Chun Lin, Qinyao Zhang, Zhenhua Ye, Liwei Xin, Guilong Gao, Xin Yan, Gang Wang, Yiheng Liu, Tao Wang, Jinshou Tian
Journal: AIP Advances
AIP Advances 10, 105102 (2020)
https://doi.org/10.1063/5.0021073
Published: October 2020
View articletitled, Effect of annealing on the electrophysical properties of CdTe/HgCdTe passivation interface by the capacitance–voltage characteristics of the metal–insulator–semiconductor structures
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Journal Articles

Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures

Open Access
Shutaro Asanuma, Kyoko Sumita, Yusuke Miyaguchi, Kazumasa Horita, Takehito Jimbo, Kazuya Saito, Noriyuki Miyata
Journal: AIP Advances
AIP Advances 10, 085114 (2020)
https://doi.org/10.1063/5.0015348
Published: August 2020
View articletitled, Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
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Journal Articles

Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation

Open Access
Xi Zhang, Hideki Takeuchi, Daniel Connelly, Marek Hytha, Robert J. Mears, Leonard M. Rubin, Tsu-Jae King Liu
Journal: AIP Advances
AIP Advances 10, 065310 (2020)
https://doi.org/10.1063/1.5144507
Published: June 2020
View articletitled, Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
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Journal Articles

High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

Open Access
Zirui Liu, Jianfeng Wang, Hong Gu, Yumin Zhang, Weifan Wang, Rui Xiong, Ke Xu
Journal: AIP Advances
AIP Advances 9, 055016 (2019)
https://doi.org/10.1063/1.5100251
Published: May 2019
View articletitled, High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment
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Journal Articles

Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma

Open Access
Fumikazu Mizutani, Shintaro Higashi, Mari Inoue, Toshihide Nabatame
Journal: AIP Advances
AIP Advances 9, 045019 (2019)
https://doi.org/10.1063/1.5081727
Published: April 2019
View articletitled, Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
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Journal Articles

134Ba diffusion in polycrystalline BaMO3 (M = Ti, Zr, Ce)

Open Access
Rokas Sažinas, Isao Sakaguchi, Mari-Ann Einarsrud, Tor Grande
Journal: AIP Advances
AIP Advances 7, 115024 (2017)
https://doi.org/10.1063/1.5006137
Published: November 2017
View articletitled, 134Ba diffusion in polycrystalline BaMO3 (M = Ti, Zr, Ce)
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Journal Articles

Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method

Open Access
K. Balin, R. Rapacz, M. Weis, J. Szade
Journal: AIP Advances
Series: Magnetism and Magnetic Materials
AIP Advances 7, 056323 (2017)
https://doi.org/10.1063/1.4978005
Published: March 2017
View articletitled, Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method
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Journal Articles

GaAs/Ge/Si epitaxial substrates: Development and characteristics

Open Access
Yury Buzynin, Vladimir Shengurov, Boris Zvonkov, Alexander Buzynin, Sergey Denisov, Nikolay Baidus, Michail Drozdov, Dmitry Pavlov, Pavel Yunin
Journal: AIP Advances
AIP Advances 7, 015304 (2017)
https://doi.org/10.1063/1.4974498
Published: January 2017
View articletitled, GaAs/Ge/Si epitaxial substrates: Development and characteristics
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Journal Articles

Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

Open Access
Xiaoqing Xu, Jiebin Zhong, Hongyun So, Aras Norvilas, Christof Sommerhalter, Debbie G. Senesky, Mary Tang
Journal: AIP Advances
AIP Advances 6, 115016 (2016)
https://doi.org/10.1063/1.4967816
Published: November 2016
View articletitled, Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility
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