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Journal Articles

Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer

Rongli Deng, Xingchen Pan, Guanzhao Yang, Haibin Lin, Junyong Li, Richard Nötzel

AIP Advances 14, 085132 (2024)

https://doi.org/10.1063/5.0224265

Published: August 2024

View article titled, Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer

Journal Articles

Enhancing growth rate in homoepitaxial growth of β-Ga₂O₃ with flat surface via hydrochloric acid addition in mist CVD

Ryo Ueda, Hiroyuki Nishinaka, Hiroki Miyake, Masahiro Yoshimoto

AIP Advances 14, 085309 (2024)

https://doi.org/10.1063/5.0219242

Published: August 2024

View article titled, Enhancing growth rate in homoepitaxial growth of β-Ga2O3 with flat surface via hydrochloric acid addition in mist CVD

Journal Articles

Experimental and theoretical studies on self-diffusion in amorphous germanium

Tim Böckendorf, Jan Kirschbaum, Felix Kipke, Dominique Bougeard, John Lundsgaard Hansen, Arne Nylandsted Larsen, Matthias Posselt, Hartmut Bracht

AIP Advances 14, 065129 (2024)

https://doi.org/10.1063/5.0183578

Published: June 2024

View article titled, Experimental and theoretical studies on self-diffusion in amorphous germanium

Journal Articles

Different substrate structures affect the substitution efficiency of Al atoms in Al_xGa_1−xN epitaxial films

R. Wang, H. Ao, J. F. Yan, Y. Liu

AIP Advances 14, 065312 (2024)

https://doi.org/10.1063/5.0206475

Published: June 2024

View article titled, Different substrate structures affect the substitution efficiency of Al atoms in AlxGa1−xN epitaxial films

Journal Articles

Investigation of MBE grown high Al concentration AlGaN ohmic contact

Yaqin Wang, Muhammad Shafa, Peng Wu, Yitao Liao

AIP Advances 14, 055026 (2024)

https://doi.org/10.1063/5.0210229

Published: May 2024

View article titled, Investigation of MBE grown high Al concentration AlGaN ohmic contact

Journal Articles

The effect of substrate-induced defects on structural and resistive switching properties in Gd_0.2Ca_0.8MnO₃ thin films

I. Angervo, A. Antola, A. Schulman, H. Huhtinen, P. Paturi

AIP Advances 14, 045309 (2024)

https://doi.org/10.1063/5.0185499

Published: April 2024

View article titled, The effect of substrate-induced defects on structural and resistive switching properties in Gd0.2Ca0.8MnO3 thin films

Journal Articles

Optimal waveguide structure for low-threshold InGaN/GaN-based photonic-crystal surface-emitting lasers

Wen-Hsuan Hsieh, Duan-Hsin Huang, Tien-Chiu Chen, Po-Yang Chang, Tien-Chang Lu, Chia-Yen Huang

AIP Advances 14, 045108 (2024)

https://doi.org/10.1063/5.0195341

Published: April 2024

View article titled, Optimal waveguide structure for low-threshold InGaN/GaN-based photonic-crystal surface-emitting lasers

Journal Articles

Dielectric properties of low-temperature-grown homoepitaxial (−201) β-Ga₂O₃ thin film by atmospheric pressure plasma-assisted CVD

Md. Earul Islam, Kento Shimamoto, Takeshi Yoshimura, Norifumi Fujimura

AIP Advances 14, 045003 (2024)

https://doi.org/10.1063/5.0189793

Published: April 2024

View article titled, Dielectric properties of low-temperature-grown homoepitaxial (−201) β-Ga2O3 thin film by atmospheric pressure plasma-assisted CVD

Journal Articles

Fast self-powered n-InGaN layer/p-Cu₂O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity

Wenfeng Zhang, Rongli Deng, Mingrui Luo, Hao Hong, Xingchen Pan, Richard Nötzel

AIP Advances 14, 045301 (2024)

https://doi.org/10.1063/5.0202164

Published: April 2024

View article titled, Fast self-powered n-InGaN layer/p-Cu2O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity

Includes: Supplementary data

Journal Articles

Phase-field modeling of ATG instability in Allen–Cahn framework

Xuyang Chen, Guangchao Li, Feng Lin

AIP Advances 14, 035044 (2024)

https://doi.org/10.1063/5.0190761

Published: March 2024

View article titled, Phase-field modeling of ATG instability in Allen–Cahn framework

Journal Articles

MBE-grown tetragonal FeTe consisting of c-axis-aligned nanocrystals

Zhihao He, Yick On To, Chen Ma, Jiannong Wang, Iam Keong Sou

AIP Advances 14, 035243 (2024)

https://doi.org/10.1063/5.0185466

Published: March 2024

View article titled, MBE-grown tetragonal FeTe consisting of c-axis-aligned nanocrystals

Includes: Supplementary data

Journal Articles

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Kun Cheng, Tianyi Tang, Wenkang Zhan, Zhenyu Sun, Bo Xu, Chao Zhao, Zhanguo Wang

AIP Advances 14, 035239 (2024)

https://doi.org/10.1063/5.0194230

Published: March 2024

View article titled, Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Journal Articles

Enhanced orbital magnetic moment of Co film grown on Fe₃O₄(001)

Zhe Zhang, Xianyang Lu, Zhihao Li, Zhuoyi Li, Yu Yan, Yuzhe Chen, Jun Du, Fangyuan Zhu, Jiefeng Cao, Yong Wang, Yao Li, Liang He, Jing Wu, Rong Zhang, Yongbing Xu

AIP Advances 14, 025049 (2024)

https://doi.org/10.1063/5.0176740

Published: February 2024

View article titled, Enhanced orbital magnetic moment of Co film grown on Fe3O4(001)

Includes: Supplementary data

Journal Articles

An efficiently excited Eu³⁺ luminescent site formed in Eu,O-codoped GaN

Takenori Iwaya, Shuhei Ichikawa, Volkmar Dierolf, Brandon Mitchell, Hayley Austin, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara

AIP Advances 14, 025044 (2024)

https://doi.org/10.1063/5.0183774

Published: February 2024

View article titled, An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN

Includes: Supplementary data

Journal Articles

Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

Arnob Ghosh, Kamruzzaman Khan, Shrivatch Sankar, Zhe (Ashley) Jian, Syed M. N. Hasan, Elaheh Ahmadi, Shamsul Arafin

AIP Advances 14, 025344 (2024)

https://doi.org/10.1063/5.0181213

Published: February 2024

View article titled, Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

Includes: Supplementary data

Journal Articles

Research on the electro-magnetic protection technique of SCB bridge based on vertical punch through PN junction

Hui Li, Chunyang Feng, Jianjun Luo, Wei Ren, Huiyuan Niu, Yingke Chang, Jiao Li

AIP Advances 14, 025129 (2024)

https://doi.org/10.1063/5.0191824

Published: February 2024

View article titled, Research on the electro-magnetic protection technique of SCB bridge based on vertical punch through PN junction

Journal Articles

Effect of junction temperature on 1.3 µm InAs/GaAs quantum dot lasers directly grown on silicon

Shuai Wang, Zun-Ren Lv, Sheng-Lin Wang, Xiao-Guang Yang, Tao Yang

AIP Advances 14, 025121 (2024)

https://doi.org/10.1063/5.0168625

Published: February 2024

View article titled, Effect of junction temperature on 1.3 µm InAs/GaAs quantum dot lasers directly grown on silicon

Journal Articles

Role of interdiffusion on the magnetism of ultrathin LaMnO₃ films

F. Stramaglia, G. Panchal, F. Nolting, C. A. F. Vaz

AIP Advances 14, 025021 (2024)

https://doi.org/10.1063/9.0000803

Published: February 2024

View article titled, Role of interdiffusion on the magnetism of ultrathin LaMnO3 films

Journal Articles

Low-temperature homoepitaxial growth of β-Ga₂O₃ thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique

Md. Earul Islam, Kento Shimamoto, Takeshi Yoshimura, Norifumi Fujimura

AIP Advances 13, 115224 (2023)

https://doi.org/10.1063/5.0178100

Published: November 2023

View article titled, Low-temperature homoepitaxial growth of β-Ga2O3 thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique

Journal Articles

Atomic-scale electronic inhomogeneity in single-layer iron chalcogenide alloys revealed by machine learning of STM/S data

Basu Dev Oli, Qiang Zou, Xin Li, Lian Li

AIP Advances 13, 105224 (2023)

https://doi.org/10.1063/5.0156695

Published: October 2023

View article titled, Atomic-scale electronic inhomogeneity in single-layer iron chalcogenide alloys revealed by machine learning of STM/S data

Includes: Supplementary data

NARROW

Topics

Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer

Enhancing growth rate in homoepitaxial growth of β-Ga₂O₃ with flat surface via hydrochloric acid addition in mist CVD

Experimental and theoretical studies on self-diffusion in amorphous germanium

Different substrate structures affect the substitution efficiency of Al atoms in Al_xGa_1−xN epitaxial films

Investigation of MBE grown high Al concentration AlGaN ohmic contact

The effect of substrate-induced defects on structural and resistive switching properties in Gd_0.2Ca_0.8MnO₃ thin films

Optimal waveguide structure for low-threshold InGaN/GaN-based photonic-crystal surface-emitting lasers

Dielectric properties of low-temperature-grown homoepitaxial (−201) β-Ga₂O₃ thin film by atmospheric pressure plasma-assisted CVD

Fast self-powered n-InGaN layer/p-Cu₂O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity

Phase-field modeling of ATG instability in Allen–Cahn framework

MBE-grown tetragonal FeTe consisting of c-axis-aligned nanocrystals

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Enhanced orbital magnetic moment of Co film grown on Fe₃O₄(001)

An efficiently excited Eu³⁺ luminescent site formed in Eu,O-codoped GaN

Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

Research on the electro-magnetic protection technique of SCB bridge based on vertical punch through PN junction

Effect of junction temperature on 1.3 µm InAs/GaAs quantum dot lasers directly grown on silicon

Role of interdiffusion on the magnetism of ultrathin LaMnO₃ films

Low-temperature homoepitaxial growth of β-Ga₂O₃ thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique

Atomic-scale electronic inhomogeneity in single-layer iron chalcogenide alloys revealed by machine learning of STM/S data

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