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    SiGe p-n junction
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    Journal Articles

    Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHz

    K. Schmalz, N. Rothbart, M. H. Eissa, J. Borngräber, D. Kissinger, H.-W. Hübers
    Journal: AIP Advances
    AIP Advances 9, 015213 (2019)
    https://doi.org/10.1063/1.5066261
    Published: January 2019
    Abstract
    View article titled, Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHz
    Open the PDF for Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHz in another window
    • Online ISSN 2158-3226

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