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Journal Articles

Quantitative simulation of electron beam’s focal spot in thermionic emission

Hadi Teymouri, Mohammad Bagher Fathi
Journal: AIP Advances
AIP Advances 13, 095110 (2023)
https://doi.org/10.1063/5.0161581
Published: September 2023
View article titled, Quantitative simulation of electron beam’s focal spot in thermionic emission
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Journal Articles

Non-stoichiometric WO3−x-based nanoscale memristor for high-density memory

Krishna Rudrapal, Sourav Das, Rabaya Basori, Pallab Banerji, Venimadhav Adyam, Ayan Roy Chaudhuri
Journal: AIP Advances
AIP Advances 13, 085011 (2023)
https://doi.org/10.1063/5.0161638
Published: August 2023
View article titled, Non-stoichiometric WO<sub>3−x</sub>-based nanoscale memristor for high-density memory
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Journal Articles

Temperature-dependent Poole–Frenkel transport properties of the SrSnO3/Nb-doped SrTiO3 heterostructure

R. F. Niu, D. P. Wang, L. Q. Cui, W. T. Wang
Journal: AIP Advances
AIP Advances 13, 055004 (2023)
https://doi.org/10.1063/5.0149807
Published: May 2023
View article titled, Temperature-dependent Poole–Frenkel transport properties of the SrSnO<sub>3</sub>/Nb-doped SrTiO<sub>3</sub> heterostructure
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Journal Articles

Computational modeling and temperature measurements using emission spectroscopy on a non-transferred plasma torch

S. L. Siddanathi, L. G. Westerberg, H. O. Åkerstedt, H. Wiinikka, A. Sepman
Journal: AIP Advances
AIP Advances 13, 025019 (2023)
https://doi.org/10.1063/5.0129653
Published: February 2023
View article titled, Computational modeling and temperature measurements using emission spectroscopy on a non-transferred plasma torch
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Journal Articles

Sub-threshold ultrafast one-photon photoemission from a Cu(111) photocathode

L. A. Angeloni, I.-J. Shan, W. Andreas Schroeder
Journal: AIP Advances
AIP Advances 12, 105129 (2022)
https://doi.org/10.1063/5.0099779
Published: October 2022
View article titled, Sub-threshold ultrafast one-photon photoemission from a Cu(111) photocathode
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Journal Articles

Characterization and modeling of resistive switching phenomena in IGZO devices

G. Carvalho, M. E. Pereira, C. Silva, J. Deuermeier, A. Kiazadeh, V. Tavares
Journal: AIP Advances
AIP Advances 12, 085017 (2022)
https://doi.org/10.1063/5.0098145
Published: August 2022
View article titled, Characterization and modeling of resistive switching phenomena in IGZO devices
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Journal Articles

Negative Schottky barrier height and surface inhomogeneity in n-silicon M–I–S structures

C. P. Harisha, M.-H. Liao, C.-C. Kei, S. Joshi
Journal: AIP Advances
AIP Advances 12, 075117 (2022)
https://doi.org/10.1063/5.0095003
Published: July 2022
View article titled, Negative Schottky barrier height and surface inhomogeneity in n-silicon M–I–S structures
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Journal Articles

Thin-film temperature sensors based on LPD-fabricated β -Ga2O3 Schottky diodes

Sanjoy Paul, Tai-Siang Chen, Mau-Phon Houng, Jian V. Li
Journal: AIP Advances
AIP Advances 12, 055314 (2022)
https://doi.org/10.1063/5.0090723
Published: May 2022
View article titled, Thin-film temperature sensors based on LPD-fabricated β -Ga<sub>2</sub>O<sub>3</sub> Schottky diodes
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Journal Articles

Effects of deposition temperature on Mo/SiC Schottky contacts

Tom N. Oder, Sai B. Naredla
Journal: AIP Advances
AIP Advances 12, 025117 (2022)
https://doi.org/10.1063/5.0083977
Published: February 2022
View article titled, Effects of deposition temperature on Mo/SiC Schottky contacts
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Journal Articles

Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times

Taehyeon Kim, Changyong Oh, So Hee Park, Joo Won Lee, Sang Ik Lee, Bo Sung Kim
Journal: AIP Advances
AIP Advances 11, 115126 (2021)
https://doi.org/10.1063/5.0069188
Published: November 2021
View article titled, Electrical properties of low-temperature SiO<sub>2</sub> thin films prepared by plasma-enhanced atomic layer deposition with different plasma times
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Includes: Supplementary data
Journal Articles

Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy

Keito Aoshima, Masahiro Horita, Jun Suda
Journal: AIP Advances
AIP Advances 11, 115124 (2021)
https://doi.org/10.1063/5.0073747
Published: November 2021
View article titled, Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy
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Journal Articles

Understanding and design of efficient carrier-selective contacts for solar cells

Guangyi Wang, Chenxu Zhang, Heng Sun, Zengguang Huang, Sihua Zhong
Journal: AIP Advances
AIP Advances 11, 115026 (2021)
https://doi.org/10.1063/5.0063915
Published: November 2021
View article titled, Understanding and design of efficient carrier-selective contacts for solar cells
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Journal Articles

Research on the influence of cathode surface topography on spark discharge

Dangshu Wang (王党树), Jiaan Yi (仪家安), Jianan Lou (娄嘉楠), Xuan Deng (邓翾), Shulin Liu (刘树林), Xinxia Wang (王新霞), Zhen Dong (董振), Yaqiang Yang (杨亚强)
Journal: AIP Advances
AIP Advances 11, 115312 (2021)
https://doi.org/10.1063/5.0067253
Published: November 2021
View article titled, Research on the influence of cathode surface topography on spark discharge
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Journal Articles

Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure

Bhishma Pandit, Jaeho Kim, Jaehee Cho
Journal: AIP Advances
AIP Advances 11, 045314 (2021)
https://doi.org/10.1063/5.0043981
Published: April 2021
View article titled, Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure
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Journal Articles

Surface ionization of metastable calcium atoms

I. Bucay, A. Helal, M. G. Raizen
Journal: AIP Advances
AIP Advances 11, 015020 (2021)
https://doi.org/10.1063/5.0005895
Published: January 2021
View article titled, Surface ionization of metastable calcium atoms
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Journal Articles

Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition

Takuya Maeda, Mitsuru Okigawa, Yuji Kato, Isao Takahashi, Takashi Shinohe
Journal: AIP Advances
AIP Advances 10, 125119 (2020)
https://doi.org/10.1063/5.0028985
Published: December 2020
View article titled, Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga<sub>2</sub>O<sub>3</sub> grown by mist chemical vapor deposition
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Journal Articles

Particle distribution functions at plasma–surface interface

C. Costin
Journal: AIP Advances
AIP Advances 10, 115308 (2020)
https://doi.org/10.1063/5.0030781
Published: November 2020
View article titled, Particle distribution functions at plasma–surface interface
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Journal Articles

Theoretical assessment of surface waviness on work function

Jacqueline R. Malayter, Allen L. Garner
Journal: AIP Advances
AIP Advances 10, 095110 (2020)
https://doi.org/10.1063/5.0016116
Published: September 2020
View article titled, Theoretical assessment of surface waviness on work function
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Includes: Supplementary data
Journal Articles

Mathematical modeling technique

R. T. Longo
Journal: AIP Advances
AIP Advances 9, 125211 (2019)
https://doi.org/10.1063/1.5129638
Published: December 2019
View article titled, Mathematical modeling technique
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Journal Articles

Testing an indirectly heated cathode ion source: Temperature and thermionic emission

C. F. M. Borges, M. A. Jerez, A. Parizat
Journal: AIP Advances
AIP Advances 9, 105202 (2019)
https://doi.org/10.1063/1.5123553
Published: October 2019
View article titled, Testing an indirectly heated cathode ion source: Temperature and thermionic emission
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