1-3 of 3
Dark field electron holography
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Field Mapping Of Semiconductors In A State‐Of‐The‐Art Electron Microscope

David Cooper, Armand Béché, Jean‐Luc Rouvière, Germain Servanton, Roland Pantel, Pierre Morin, Amal Chabli
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1395, 64–73 (2011)
https://doi.org/10.1063/1.3657867
Published: November 2011
View articletitled, Field Mapping Of Semiconductors In A State‐Of‐The‐Art Electron Microscope
Open the PDF for Field Mapping Of Semiconductors In A State‐Of‐The‐Art Electron Microscope in another window
Journal Articles

Annealed Si/SiGeC Superlattices Studied by Dark‐Field Electron Holography, ToF‐SIMS and Infrared Spectroscopy

T. Denneulin, J. L. Rouvière, A. Béché, M. Py, J. P. Barnes, N. Rochat, J. M. Hartmann, D. Cooper
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1395, 105–109 (2011)
https://doi.org/10.1063/1.3657874
Published: November 2011
View articletitled, Annealed Si/SiGeC Superlattices Studied by Dark‐Field Electron Holography, ToF‐SIMS and Infrared Spectroscopy
Open the PDF for Annealed Si/SiGeC Superlattices Studied by Dark‐Field Electron Holography, ToF‐SIMS and Infrared Spectroscopy in another window
Journal Articles

Characterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channels

R. Thomas, D. Benoit, L. Clément, P. Morin, D. Cooper, F. Bertin
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1395, 90–94 (2011)
https://doi.org/10.1063/1.3657871
Published: November 2011
View articletitled, Characterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channels
Open the PDF for Characterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channels in another window