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Journal Articles

Strain controlled electronic and transport properties of Si-C atomic wire

Rajesh Thakur, Ashok Kumar, P. K. Ahluwalia, Raman Sharma

AIP Conf. Proc. 2115, 030374 (2019)

https://doi.org/10.1063/1.5113213

Published: July 2019

View article titled, Strain controlled electronic and transport properties of Si-C atomic wire

Journal Articles

Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

I. B. Hendra P., F. Rahayu, Y. Darma

AIP Conf. Proc. 1589, 221–224 (2014)

https://doi.org/10.1063/1.4868786

Published: March 2014

View article titled, Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

Journal Articles

Model of electron tunneling through molecular junction: Numerically exact solution and performance of approximation methods

Martin Čížek, Lukáš Gráf

AIP Conf. Proc. 1558, 2492–2495 (2013)

https://doi.org/10.1063/1.4826046

Published: October 2013

View article titled, Model of electron tunneling through molecular junction: Numerically exact solution and performance of approximation methods

Journal Articles

Electron tunneling current in isotropic n + Poly - Si / HfSiO x N / Trap / SiO 2 / p - Si capacitors: Effect of the depth and width traps and Si orientation

Fatimah A. Noor, Khairiah, Mikrajuddin Abdullah, Khairurrijal

AIP Conf. Proc. 1554, 154–157 (2013)

https://doi.org/10.1063/1.4820308

Published: September 2013

View article titled, Electron tunneling current in isotropic n + Poly - Si / HfSiO x N / Trap / SiO 2 / p - Si capacitors: Effect of the depth and width traps and Si orientation

Journal Articles

Collective Tunneling Model between Two‐Dimensional Electron Gas to Si‐Nano Dot

M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, K. Makihara, M. Ikeda, S. Miyazaki, Y. Shigeta, T. Endoh

AIP Conf. Proc. 1399, 295–296 (2011)

https://doi.org/10.1063/1.3666370

Published: December 2011

View article titled, Collective Tunneling Model between Two‐Dimensional Electron Gas to Si‐Nano Dot

Journal Articles

Mechanical vibrations induced resonant breakdown of the Coulomb blockade

A. G. Pogosov, M. V. Budantsev, A. A. Shevyrin, A. E. Plotnikov, A. K. Bakarov, A. I. Toropov

AIP Conf. Proc. 1399, 395–396 (2011)

https://doi.org/10.1063/1.3666420

Published: December 2011

View article titled, Mechanical vibrations induced resonant breakdown of the Coulomb blockade

Journal Articles

Growth of self‐assembled InAs quantum dashes and their applications to single electron transistors

K. Shibata, K. Seki, K. M. Cha, I. Horiuchi, K. Hirakawa

AIP Conf. Proc. 1399, 273–274 (2011)

https://doi.org/10.1063/1.3666359

Published: December 2011

View article titled, Growth of self‐assembled InAs quantum dashes and their applications to single electron transistors

Journal Articles

Electron Tunnel Current through HfO 2 / SiO 2 Nanometer‐thick Layers with a Trapped Charge: Effects of Electron Incident Angle and Silicon Substrate Orientation

Fatimah A. Noor, Muhammad F. Sahdan, Panji Achmari, Ferry Iskandar, Mikrajuddin Abdullah, Khairurrijal

AIP Conf. Proc. 1415, 32–35 (2011)

https://doi.org/10.1063/1.3667213

Published: December 2011

View article titled, Electron Tunnel Current through HfO 2 / SiO 2 Nanometer‐thick Layers with a Trapped Charge: Effects of Electron Incident Angle and Silicon Substrate Orientation

Journal Articles

Few Carriers Injection and Local Transport Characteristics of Si Based Quantum Dots Probed by Atomic Force Microscopy

Yudi Darma

AIP Conf. Proc. 1415, 17–20 (2011)

https://doi.org/10.1063/1.3667209

Published: December 2011

View article titled, Few Carriers Injection and Local Transport Characteristics of Si Based Quantum Dots Probed by Atomic Force Microscopy

Journal Articles

Simulation of Electron Tunnel Current through HfO 2 / SiO 2 Nanometer‐thick Layers with a Trapped Charge of a MOS Capacitor Using a Transfer‐Matrix Method

Panji Achmari, Muhammad F. Sahdan, Fatimah A. Noor, Ferry Iskandar, Mikrajuddin Abdullah, Khairurrijal

AIP Conf. Proc. 1415, 71–74 (2011)

https://doi.org/10.1063/1.3667223

Published: December 2011

View article titled, Simulation of Electron Tunnel Current through HfO 2 / SiO 2 Nanometer‐thick Layers with a Trapped Charge of a MOS Capacitor Using a Transfer‐Matrix Method

Journal Articles

Excitation of terahertz nanoantennas by Rabi waves

G. Ya. Slepyan, Y. D. Yerchak, S. A. Maksimenko, A. Hoffmann, F. G. Bass

AIP Conf. Proc. 1398, 183–185 (2011)

https://doi.org/10.1063/1.3644252

Published: October 2011

View article titled, Excitation of terahertz nanoantennas by Rabi waves

Journal Articles

The Dwell Time of Electron Tunneling Through a Double Barrier in the Presence of Rashba SOI

Doru‐Marcel Baltateanu

AIP Conf. Proc. 1387, 123–129 (2011)

https://doi.org/10.1063/1.3647063

Published: October 2011

View article titled, The Dwell Time of Electron Tunneling Through a Double Barrier in the Presence of Rashba SOI

Journal Articles

Effect of Electric Field Alignment of MWCNT in PMMA Matrix for Hydrogen Gas Purification

Sumit Kumar, Subodh Srivastava, Shweta Agrawal, Balram Tripathi, Y. K. Vijay

AIP Conf. Proc. 1349, 1061–1062 (2011)

https://doi.org/10.1063/1.3606228

Published: July 2011

View article titled, Effect of Electric Field Alignment of MWCNT in PMMA Matrix for Hydrogen Gas Purification

Journal Articles

Parallel‐Perpendicular Kinetic Energy Coupling Effect on Electron Tunneling Currents in Al / HfO 2 / p ‐ Ge and Al / SiO 2 / p ‐ Si MOS Diodes with Nanometer‐Thick Oxides

Lilik Hasanah, Hideki Murakami, Khairurrijal, Seiichi Miyazaki

AIP Conf. Proc. 1284, 34–38 (2010)

https://doi.org/10.1063/1.3515556

Published: October 2010

View article titled, Parallel‐Perpendicular Kinetic Energy Coupling Effect on Electron Tunneling Currents in Al / HfO 2 / p ‐ Ge and Al / SiO 2 / p ‐ Si MOS Diodes with Nanometer‐Thick Oxides

Journal Articles

Nanoscale chemical imaging using synchrotron x‐ray enhanced scanning tunneling microscopy

Volker Rose, John W. Freeland

AIP Conf. Proc. 1234, 445–448 (2010)

https://doi.org/10.1063/1.3463236

Published: June 2010

View article titled, Nanoscale chemical imaging using synchrotron x‐ray enhanced scanning tunneling microscopy

Journal Articles

Non‐Adiabatic Effects in Electron Tunneling in Molecular Junctions

Vladimiro Mujica, Thorsten Hansen, Mark A. Ratner

AIP Conf. Proc. 963, 235–237 (2007)

https://doi.org/10.1063/1.2836049

Published: December 2007

View article titled, Non‐Adiabatic Effects in Electron Tunneling in Molecular Junctions

Journal Articles

Long‐Distance Electron Transfer Coupled to Proton Pumping and Energy Transduction in Biological Systems: A Semiempirical First‐Principles Approach

Xuehe Zheng, Ngan M. Ly, Alexei A. Stuchebrukhov

AIP Conf. Proc. 963, 278–281 (2007)

https://doi.org/10.1063/1.2836061

Published: December 2007

View article titled, Long‐Distance Electron Transfer Coupled to Proton Pumping and Energy Transduction in Biological Systems: A Semiempirical First‐Principles Approach

Journal Articles

Non‐Markovian dynamics in the theory of full counting statistics

Christian Flindt, Alessandro Braggio, Tomáš Novotný

AIP Conf. Proc. 922, 531–534 (2007)

https://doi.org/10.1063/1.2759735

Published: July 2007

View article titled, Non‐Markovian dynamics in the theory of full counting statistics

Journal Articles

Low‐Frequency Noise in RF nMOS Transistors from a 70 nm CMOS Technology

M. J. Deen, O. Marinov, Y. Kiyota

AIP Conf. Proc. 922, 129–132 (2007)

https://doi.org/10.1063/1.2759651

Published: July 2007

View article titled, Low‐Frequency Noise in RF nMOS Transistors from a 70 nm CMOS Technology

Journal Articles

Time dependent model of resonant tunneling in multiple‐wide‐quantum‐well structures with homogeneous and nonhomogeneous interfaces

V. N. Murzin, L. Yu. Shchurova, Yu. A. Mityagin

AIP Conf. Proc. 893, 589–590 (2007)

https://doi.org/10.1063/1.2730029

Published: April 2007

View article titled, Time dependent model of resonant tunneling in multiple‐wide‐quantum‐well structures with homogeneous and nonhomogeneous interfaces

NARROW

Topics

Strain controlled electronic and transport properties of Si-C atomic wire

Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

Model of electron tunneling through molecular junction: Numerically exact solution and performance of approximation methods

Electron tunneling current in isotropic n + Poly - Si / HfSiO x N / Trap / SiO 2 / p - Si capacitors: Effect of the depth and width traps and Si orientation

Collective Tunneling Model between Two‐Dimensional Electron Gas to Si‐Nano Dot

Mechanical vibrations induced resonant breakdown of the Coulomb blockade

Growth of self‐assembled InAs quantum dashes and their applications to single electron transistors

Electron Tunnel Current through HfO 2 / SiO 2 Nanometer‐thick Layers with a Trapped Charge: Effects of Electron Incident Angle and Silicon Substrate Orientation

Few Carriers Injection and Local Transport Characteristics of Si Based Quantum Dots Probed by Atomic Force Microscopy

Simulation of Electron Tunnel Current through HfO 2 / SiO 2 Nanometer‐thick Layers with a Trapped Charge of a MOS Capacitor Using a Transfer‐Matrix Method

Excitation of terahertz nanoantennas by Rabi waves

The Dwell Time of Electron Tunneling Through a Double Barrier in the Presence of Rashba SOI

Effect of Electric Field Alignment of MWCNT in PMMA Matrix for Hydrogen Gas Purification

Parallel‐Perpendicular Kinetic Energy Coupling Effect on Electron Tunneling Currents in Al / HfO 2 / p ‐ Ge and Al / SiO 2 / p ‐ Si MOS Diodes with Nanometer‐Thick Oxides

Nanoscale chemical imaging using synchrotron x‐ray enhanced scanning tunneling microscopy

Non‐Adiabatic Effects in Electron Tunneling in Molecular Junctions

Long‐Distance Electron Transfer Coupled to Proton Pumping and Energy Transduction in Biological Systems: A Semiempirical First‐Principles Approach

Non‐Markovian dynamics in the theory of full counting statistics

Low‐Frequency Noise in RF nMOS Transistors from a 70 nm CMOS Technology

Time dependent model of resonant tunneling in multiple‐wide‐quantum‐well structures with homogeneous and nonhomogeneous interfaces

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