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Journal Articles

Electrical and photovoltaic properties of Au-n-CuInSe₂ based Schottky barriers

Akhmet Kh. Matiyev, Ruslan T. Uspazhiev, Aslambek I. Khasanov, Мagomed-Ali V. Zubkhadzhiev, Roman S. Dzhambulatov, Igor A. Sysoev

AIP Conf. Proc. 3183, 040003 (2024)

https://doi.org/10.1063/5.0225475

Published: November 2024

View article titled, Electrical and photovoltaic properties of Au-n-CuInSe2 based Schottky barriers

Journal Articles

Silicon radiation detectors with rectifier junction prepared by different technological procedures

Ladislav Hrubčín, Bohumír Zaťko, Eva Kováčová

AIP Conf. Proc. 3251, 080005 (2024)

https://doi.org/10.1063/5.0239936

Published: October 2024

View article titled, Silicon radiation detectors with rectifier junction prepared by different technological procedures

Journal Articles

Simulation and analysis of capacitance-voltage characteristics of a circular MEMS actuator using Al₂O₃ as dielectric oxide layer and compared with SiO₂

Busireddy Mahesh Reddy, G. Anitha

AIP Conf. Proc. 2871, 030004 (2024)

https://doi.org/10.1063/5.0227960

Published: September 2024

View article titled, Simulation and analysis of capacitance-voltage characteristics of a circular MEMS actuator using Al2O3 as dielectric oxide layer and compared with SiO2

Journal Articles

Simulation and capacitance-voltage characteristics of a circular MEMS actuator using dielectric oxides TiO₂ nanostructures compared with conventional SiO₂

Busireddy Mahesh Reddy, J. Cyril Robinson Azariah

AIP Conf. Proc. 2587, 140020 (2023)

https://doi.org/10.1063/5.0179108

Published: November 2023

View article titled, Simulation and capacitance-voltage characteristics of a circular MEMS actuator using dielectric oxides TiO2 nanostructures compared with conventional SiO2

Journal Articles

Simulation and comparison of capacitance voltage characteristics due to the effect of varying temperatures in Cu/Pbse/Tio₂/Si and Cu/Pbte/Tio₂/Si based MOS quantum dot device configurations

Naga Anudeep Gayala, J. Cyril Robinson Azariah

AIP Conf. Proc. 2822, 020002 (2023)

https://doi.org/10.1063/5.0177048

Published: November 2023

View article titled, Simulation and comparison of capacitance voltage characteristics due to the effect of varying temperatures in Cu/Pbse/Tio2/Si and Cu/Pbte/Tio2/Si based MOS quantum dot device configurations

Journal Articles

Simulation and comparison of capacitance voltage characteristics in copper (II) oxide and silicon dioxide-based MOS capacitor

D. Subhasree, R. Yuvaraj

AIP Conf. Proc. 2822, 020271 (2023)

https://doi.org/10.1063/5.0173241

Published: November 2023

View article titled, Simulation and comparison of capacitance voltage characteristics in copper (II) oxide and silicon dioxide-based MOS capacitor

Journal Articles

Simulation and comparison of capacitance voltage characteristics due to the effect of varying temperatures for MOS quantum dot device configurations in Al/Pbse/ZnO/Si and Al/Pbte/ZnO/Si

Naga Anudeep Gayala, Cyril Robinson Azariah John Chelliah

AIP Conf. Proc. 2655, 020093 (2023)

https://doi.org/10.1063/5.0116614

Published: May 2023

View article titled, Simulation and comparison of capacitance voltage characteristics due to the effect of varying temperatures for MOS quantum dot device configurations in Al/Pbse/ZnO/Si and Al/Pbte/ZnO/Si

Journal Articles

Reduced leakage current in Al₂O₃/TiO₂/Al₂O₃ dielectric stacks grown by pulsed laser deposition

P. S. Padhi, R. S. Ajimsha, S. K. Chetia, Amit K. Das, Vikas K. Sahu, P. Misra

AIP Conf. Proc. 2265, 030190 (2020)

https://doi.org/10.1063/5.0017560

Published: November 2020

View article titled, Reduced leakage current in Al2O3/TiO2/Al2O3 dielectric stacks grown by pulsed laser deposition

Journal Articles

Compensation of the sputter damage during a-Si deposition for poly-Si/SiO_x passivating contacts by ex-situ p-doping

Jonathan Linke, Johannes Rinder, Giso Hahn, Barbara Terheiden

AIP Conf. Proc. 2147, 040018 (2019)

https://doi.org/10.1063/1.5123845

Published: August 2019

View article titled, Compensation of the sputter damage during a-Si deposition for poly-Si/SiOx passivating contacts by ex-situ p-doping

Journal Articles

Role of thermal SiO₂ on passivation of highly doped layer

Amir Dastgheib-Shirazi, Giso Hahn, Barbara Terheiden

AIP Conf. Proc. 2147, 070001 (2019)

https://doi.org/10.1063/1.5123862

Published: August 2019

View article titled, Role of thermal SiO2 on passivation of highly doped layer

Journal Articles

Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer

Bohumír Zaťko, Ladislav Hrubčín, Pavol Boháček, Jozef Osvald, Andrea Šagátová, Mária Sekáčová, Eva Kováčová, Vladimír Nečas

AIP Conf. Proc. 2131, 020054 (2019)

https://doi.org/10.1063/1.5119507

Published: July 2019

View article titled, Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer

Journal Articles

Tunable charge trapping behavior of solution processed ZrO₂ (MOS) in presence of different optical illumination

Sandip Mondal

AIP Conf. Proc. 2115, 030215 (2019)

https://doi.org/10.1063/1.5113054

Published: July 2019

View article titled, Tunable charge trapping behavior of solution processed ZrO2 (MOS) in presence of different optical illumination

Journal Articles

Fabrication of HfO₂ based MOS and RRAM devices: A study of thermal annealing effects on these devices

N. Arun, J. Prabana, K. Vinod Kumar, A. P. Pathak, S. V. S. Nageswara Rao

AIP Conf. Proc. 2115, 030216 (2019)

https://doi.org/10.1063/1.5113055

Published: July 2019

View article titled, Fabrication of HfO2 based MOS and RRAM devices: A study of thermal annealing effects on these devices

Journal Articles

Electrical behaviour of fully solution processed HfO₂ (MOS) in presence of different light illumination

Sandip Mondal

AIP Conf. Proc. 1942, 060007 (2018)

https://doi.org/10.1063/1.5028777

Published: April 2018

View article titled, Electrical behaviour of fully solution processed HfO2 (MOS) in presence of different light illumination

Journal Articles

Memory effects in a Al/Ti:HfO₂/CuPc metal-oxide-semiconductor device

Udbhav Tripathi, Ramneek Kaur

AIP Conf. Proc. 1731, 060009 (2016)

https://doi.org/10.1063/1.4947815

Published: May 2016

View article titled, Memory effects in a Al/Ti:HfO2/CuPc metal-oxide-semiconductor device

Journal Articles

Determination of the characteristic parameters of Au/PVDF/n-InP Schottky structure from current-voltage and capacitance-voltage measurements

R. Padma, V. Rajagopal Reddy

AIP Conf. Proc. 1665, 120033 (2015)

https://doi.org/10.1063/1.4918140

Published: June 2015

View article titled, Determination of the characteristic parameters of Au/PVDF/n-InP Schottky structure from current-voltage and capacitance-voltage measurements

Journal Articles

Complex electric modulus and dielectric relaxation of nanocrystalline zinc ferrite

S. Choudhury, M. Sinha, M. K. Mandal, S. K. Pradhan, A. K. Meikap

AIP Conf. Proc. 1665, 110023 (2015)

https://doi.org/10.1063/1.4918079

Published: June 2015

View article titled, Complex electric modulus and dielectric relaxation of nanocrystalline zinc ferrite

Journal Articles

Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

Sathyanarayana Bhat, Asha Rao, Sheeja Krishnan, Ganesh Sanjeev, E. P. Suresh

AIP Conf. Proc. 1591, 1452–1454 (2014)

https://doi.org/10.1063/1.4872993

Published: April 2014

View article titled, Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

Journal Articles

Temperature dependent capacitance-voltage measurement of Al / Al 2 O 3 / PVA :n− CdSe MIS diode

Mamta Sharma, S. K. Tripathi

AIP Conf. Proc. 1591, 516–518 (2014)

https://doi.org/10.1063/1.4872658

Published: April 2014

View article titled, Temperature dependent capacitance-voltage measurement of Al / Al 2 O 3 / PVA :n− CdSe MIS diode

Journal Articles

Surface defect states in MBE-grown CdTe layers

Karolina Olender, Tadeusz Wosinski, Krzysztof Fronc, Zbigniew Tkaczyk, Sergij Chusnutdinow, Grzegorz Karczewski

AIP Conf. Proc. 1583, 140–144 (2014)

https://doi.org/10.1063/1.4865622

Published: February 2014

View article titled, Surface defect states in MBE-grown CdTe layers

NARROW

Topics

Electrical and photovoltaic properties of Au-n-CuInSe₂ based Schottky barriers

Silicon radiation detectors with rectifier junction prepared by different technological procedures

Simulation and analysis of capacitance-voltage characteristics of a circular MEMS actuator using Al₂O₃ as dielectric oxide layer and compared with SiO₂

Simulation and capacitance-voltage characteristics of a circular MEMS actuator using dielectric oxides TiO₂ nanostructures compared with conventional SiO₂

Simulation and comparison of capacitance voltage characteristics due to the effect of varying temperatures in Cu/Pbse/Tio₂/Si and Cu/Pbte/Tio₂/Si based MOS quantum dot device configurations

Simulation and comparison of capacitance voltage characteristics in copper (II) oxide and silicon dioxide-based MOS capacitor

Simulation and comparison of capacitance voltage characteristics due to the effect of varying temperatures for MOS quantum dot device configurations in Al/Pbse/ZnO/Si and Al/Pbte/ZnO/Si

Reduced leakage current in Al₂O₃/TiO₂/Al₂O₃ dielectric stacks grown by pulsed laser deposition

Compensation of the sputter damage during a-Si deposition for poly-Si/SiO_x passivating contacts by ex-situ p-doping

Role of thermal SiO₂ on passivation of highly doped layer

Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer

Tunable charge trapping behavior of solution processed ZrO₂ (MOS) in presence of different optical illumination

Fabrication of HfO₂ based MOS and RRAM devices: A study of thermal annealing effects on these devices

Electrical behaviour of fully solution processed HfO₂ (MOS) in presence of different light illumination

Memory effects in a Al/Ti:HfO₂/CuPc metal-oxide-semiconductor device

Determination of the characteristic parameters of Au/PVDF/n-InP Schottky structure from current-voltage and capacitance-voltage measurements

Complex electric modulus and dielectric relaxation of nanocrystalline zinc ferrite

Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

Temperature dependent capacitance-voltage measurement of Al / Al 2 O 3 / PVA :n− CdSe MIS diode

Surface defect states in MBE-grown CdTe layers

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