Abrupt depletion layer approximation for the metal insulator semiconductor diode

The excess surface charge carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode are determined as a function of the gate voltage using the precise equations and equations derived using the abrupt depletion layer approximation. Calculations are made for different insulator thicknesses, doping concentrations, and temperatures. The results are compared, and their differences are discussed. It is shown that the results are similar except at the accumulation‐depletion and depletion‐inversion transition regions.